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HIGH‐POWER AND HIGH‐EFFICIENCY GaAs AVALANCHE DIODES
1.V. J. Higgins, F. A. Brand, and J. J. Baranowski, IEEE Trans. Electron Devices 13, 210 (1966).
2.L. Armstrong, IEEE Trans. Electron Devices 15, 938 (1968).
3.V. J. Higgins, F. A. Brand, and J. J. Baranowski, presented at 4th Annual Informal Conference on Active Microwave Effects in Bulk Semiconductors, New York City, 1968 (unpublished).
4.H. J. Kuno, J. R. Collard, and A. Gobat, Electronics Letters 4, 540 (1968).
5.C. Kim (unpublished).
6.C. Kim, presented at 1968 International Conference on Gallium Arsenide, Dallas, Tex., 1968 (to be published).
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