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InGaAs–CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER
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5.The sample was graciously supplied by E. F. Hockings of these Laboratories. The sample was No. 21 in the following reference: E. E. Hockings, I. Kudman, T. Seiden, C. Schmelz, and E. Steigmeier, J. Appl. Phys. 37, 2879 (1966).
6.The optical absorption was 50% at 0.92 eV.
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8.H. Kressel and G. Kupsky, Intern. J. Electron. 20, 6 (1966);
8.H. Kressel and G. Kupsky, 20, 535 (1966)., Int. J. Electron.
9.In the Schottky approximation, the bands bend 1 V in 100 Å for and 3
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