DEPTH DISTRIBUTION OF DIVACANCIES IN 400‐keV O+ ION‐IMPLANTED SILICON
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3.The channeling technique does not measure specific lattice defects, but rather the depth distribution of silicon scattering centers, which are silicon atoms displaced from lattice sites by These scattering centers (disorder) include both directly displaced silicon atoms as well as those silicon atoms displaced from their lattice sites as a result of lattice distortion. P. Sigmund [Appl. Phys. Letters 14, 114 (1969)] has suggested that an appreciable part of the disorder as measured by the channeling technique is due to distortion around specific defects.
3.In particular, the silicon scattering centers are not on the regular interstitial lattice sites [S. T. Picraux, J. E. Westmoreland, J. W. Mayer, R. R. Hart, and O. J. Marsh, Appl. Phys. Letters 14, 7 (1969)],
3.and it has been pointed out [F. L. Vook and H. J. Stein, Radiation Effects 2, 23 (1969)] that because of strain distortion the six nearest neighbors around the silicon divacancy would contribute to channeling measurements of disorder.
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18.Preliminary measurements of the optical absorption following ion implantation indicate an annealing growth of divacancies similar to that following neutron irradiation (Refs. 16 and 17).
19.The ion fluence given in Ref. 9 was measured without secondary electron suppression. Recent results using electron suppression indicate the fluence given in Ref. 9 should be multiplied by 0.3.
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