No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
SPONTANEOUS AND LASER EMISSION FROM Pb1−x Sn x Te DIODES PREPARED BY Sb DIFFUSION
1.J. O. Dimmock, I. Melngailis, and A. J. Strauss, Phys. Rev. Letters 16, 1193 (1966).
2.J. F. Butler, A. R. Calawa, and T. C. Harman, Appl. Phys. Letters 9, 427 (1966).
3.J. F. Butler and T. C. Harman, Appl. Phys. Letters 12, 347 (1968).
4.For a recent review see T. C. Harman in Proceedings of the Conference on Semimetals and Narrow Band Gap Semiconductors, Dallas, 1970 (unpublished);
4.J. Phys. Chem. Solids (to be published).
5.G. A. Antcliffe and J. S. Wrobel, Bull. Material Sci. (to be published).
6.Annealed with 1% Pb rich stock for 1 day at 750°C, 3 days at 700°C, and 3 days at 450°C.
7.Although the peak power from our Pb‐annealed lasers is slightly lower than reported from similar devices in Ref. 1, due probably to reduced crystal perfection, comparisons made between diodes prepared from the same material by the two techniques are significant.
8.A. Yariv and R. C. C. Liete, J. Appl. Phys. 34, 3410 (1963).
9.N. Patel and A. Yariv, IEEE J. Quantum Electron. QE‐6, 383 (1970).
10.W. P. Dumke, Lasers, edited by A. K. Levine (Dekker Inc., New York, 1968), Vol. 2, pp. 257.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month