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LOW‐TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
1.M. P. Lepselter and J. M. Andrews, in Ohmic Contacts to Semiconductors, edited by B. Schwartz (The Electrochemical Society, New York, 1969), p. 159.
2.O. Meyer, J. Gyulai, and J. W. Mayer, Surface Sci. 22, 263 (1970);
2.J. Gyulai, J. W. Mayer, I. V. Mitchell, and V. Rodriguez, Appl. Phys. Letters 17, 332 (1970).
3.T. Satake, M. Kamoshida, and T. Okada, Japan. J. Appl. Phys. 7, 785 (1968);
3.M. Kamoshida and T. Okada, Nippon Electric Co. Research and Development Report No. 16, 1970, p. 24 (unpublished). Samples prepared by Nippon Electric Co.
4.Backscattering cannot distinguish a priori between migration of Si into Pt or vice versa. However, the long leading edge in the silicon spectra (e.g., at 350 °C) and the fact that initially thermodynamically unstable platinum‐rich compounds are formed suggested that silicon is the migrating species.
5.M. Hansen, Constitution of Binary Alloys (McGraw‐Hill, New York, 1958), p. 1140.
6.We speculate that low‐temperature migration may be a common phenomenon in systems where compounds and/or eutectics exist. Further investigations on a range of systems are under way.
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