No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
1.R. F. Mehl, F. N. Rhines, and K. A. von den Steinen, Metals and Alloys 13, 41 (1941).
2.E. H. Dix and A. C. Heath, Trans. AIME 78, 164 (1928).
3.Actually the highest [Si] was measured just outside the oxide cuts and was taken to represent σ. This comes about because the Si substrate is a very effective nucleation center, and even our most rapidly cooled specimens lost some Si to the substrate over the oxide cuts, but not elsewhere, during quench.
4.Max Hansen, Constitution of Binary Alloys (McGraw‐Hill, New York, 1958), p. 133.
5.Rodney P. Elliott, Constitution of Binary Alloys, First Supplement (McGraw‐Hill, New York, 1965), pp. 55–56.
6.T. O. McKinley, K. F. J. Heinrich, and D. B. Wittry, The Electron Microprobe (Wiley, New York, 1966), p. 125.
7.Obtained from Cominco American, Spokane, Wash.
8.H. R. Freche, Trans. AIME 122, 324 (1936).
9.A. Beerwald, Z. Elektrochem. Angew. Phys. Chem. 45, 789 (1939).
10.H. Bückle, Z. Elektrochem. 49, 238 (1943).
11.William G. Fricke, Jr., ASM Trans. Quarterly 58, 421 (1965).
12.F. Jona, J. Appl. Phys. 42, 2557 (1971).
13.A. Y. C. Yu and C. A. Mead, Solid State Electron. 13, 97 (1970).
14.A. Hiraki, M.‐A. Nicolet, and J. W. Mayer, Appl. Phys. Letters 18, 178 (1971).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month