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Optical Gain in Lightly Doped GaAs
1.J. A. Rossi, N. Holonyak, P. D. Dapkus, F. V. Williams, and J. W. Burd, Appl. Phys. Letters 13, 117 (1968);
1.J. A. Rossi, D. L. Kenne, N. Holonyak, Jr., P. D. Dapkus, and R. D. Burnham, J. Appl. Phys. 41, 312 (1970).
2.N. Holonyak, Jr., M. R. Johnson, and J. A. Rossi, Appl. Phys. Letters 12, 151 (1968).
3.N. G. Basov, O. V. Bogdankevich, V. A. Gancharov, B. M. Lavrushin, and V. Uy. Sudzilovskii, Sov. Phys. Dokl. 11, 522 (1966).
4.C. Benoit‐a‐la‐Guillaume, J. M. Debever, and F. Salvan, Phys. Rev. 177, 567 (1969).
5.D. Magde and H. Mahr, Phys. Rev. Letters 24, 890 (1970).
6.E. Göbel, H. J. Queisser, and M. H. Pilkuhn, Solid‐State Commun. 9, 429 (1971). These authors have drawn similar conclusions concerning stimulated recombination in InP.
7.K. L. Shaklee and R. F. Leheny, Appl. Phys. Letters 18, 475 (1971).
8.Jagdeep Shah, R. C. C. Leite, and R. E. Nahory, Phys. Rev. 184, 811 (1969).
9.Saturation of the amplified light occurs when the stimulated emission intensity is sufficiently intense so that stimulated recombination begins to dominate the total recombination process. A detailed fit to the length variation including saturation is possible and will be published elsewhere.
10.M. D. Sturge, Phys. Rev. 127, 768 (1962).
11.It is interesting to note that similar red shifts have been observed in other semiconductors (CdS, GaN, and GaSe) for which a band‐gap shift is not expected. The saturation properties for these materials are similar to those we observe in GaAs.
12.U. Heim, O. Roder, and M. H. Pilkuhn, Solid‐State Commun. 7, 1173 (1969).
13.D. K. Wilson [Appl. Phys. Letters 3, 127 (1963)] appears to be the first to suggest this possibility.
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