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DEFECTS IN GaAs PRODUCED BY LITHIUM
1.J. Blanc, R. H. Bube and L. R. Weisberg, Phys. Rev. Letters 9, 252 (1962).
2.C. S. Fuller and K. B. Wolfstirn, J. Appl. Phys. 33, 2507 (1962);
2.Proc. Conf. on Semiconductors, Exeter, England, July 1962 (to be published).
3.Katherine B. Wolfstirn (to be published).
4.The authors thank A. J. Ahearn of these Laboratories for these analyses.
5.B. Goldstein, Phys. Rev. 121, 1305 (1961). This calculation assumes the energy of jumping is one‐half the energy of activation for Ga self‐diffusion and an entropy of jumping of (A. S. Nowick‐Gordon Conference‐Chemistry and Phys. of Metals, 1956).
6.H. Reiss, C. S. Fuller, and F. J. Morin, Bell Sys. Tech. J. 35, 52 (1956).
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