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Orange Laser Emission and Bright Electroluminescence from In1−x Ga x P Vapor‐Grown p‐n Junctions
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18.The brightness B (in foot‐lamberts) was calculated from the expression [Ref. 5 and also C. J. Nuese, J. J. Tietjen, J. J. Gannon, and H. F. Gossenberger, J. Electrochem. Soc. 116, 248 (1969)], where is the external quantum efficiency, λ is the emission wavelength (in microns), L is the luminous efficiency (in lumens/watt) of a standard photopic eye at that wavelength, and J is the current density (in ). Application of this expression to our rectangular unencapsulated diodes requires that the emission be monochromatic at wavelength λ (i.e., that there be no lowenergy infrared emission) and originate entirely from the surface of interest (i.e., not from the edges of the diode). Both assumptions are thought to hold reasonably for the devices described here.
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