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Effects of Al Films on Ion‐Implanted Si
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2.D. H. Lee, O. J. Marsh, and R. R. Hart, in Proceedings of the International Conference on Ion Implantation, Garmisch‐Partenkirchen, Germany, 1971 (to be published).
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4.Conversion of the energy to a depth scale is based upon stopping‐power considerations. The film thickness determined from backscattering measurements is in agreement with results from multiple beam interferometry and the quartz crystal method during evaporation.
5.It should be noted that the intensity of the color is sensitive to surface contamination of the Si before evaporation.
6.J. W. Mayer, L. Eriksson, and J. H. Davies, Ion Implantation in Semiconductors (Academic, New York, 1970), Chap. 3.
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