Elastic and Anelastic Behavior of Ion‐Implanted Silicon
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2.D. O. Thompson and V. K. Pare, in Ref. 1, Chap. 7.
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7.We take as and and as and respectively. These moduli were calculated from the data of H. J. McSkimin and P. Andreatch, Jr. [J. Appl. Phys. 35, 2161 (1964)].
8.A similar type of measurement has been reported recently by R. E. Whan and G. W. Arnold [Appl. Phys. Letters 17, 378 (1970)].
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11.H. Ehrenreich and D. Turnbull, Comments Solid State Phys. 3, 75 (1970).
12.E. Klokholm and B. S. Berry, J. Electrochem. Soc. 115, 823 (1968).
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