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Enhanced Annealing Effects in Boron‐Implanted Layers in Silicon by Postimplantation of Silicon Ions
1.D. E. Davies, Appl. Phys. Letters 14, 227 (1969);
1.B. L. Crowder and F. F. Morehead, Jr., Appl. Phys. Letters 14, 313 (1969); , Appl. Phys. Lett.
1.R. R. Hart and O. J. Marsh, Appl. Phys. Letters 15, 206 (1969); , Appl. Phys. Lett.
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2.N. G. Blamires, M. D. Matthews, and R. S. Nelson, Phys. Letters 28A, 178 (1968).
3.N. G. Blamires, European Conference on Ion Implantation, Reading, 1970 (unpublished);
3.N. G. Blamires (private communication).
4.B. L. Crowder and R. S. Title, Radiation Effects 6, 63 (1971).
5.A model of the dependence of amorphous‐layer formation on target temperature was formulated by F. F. Morehead and B. L. Crowder [Radiation Effects 6, 27 (1971)].
6.L.O. Bauer, International Conference on Ion Implantation in Semiconductors, Germany, 1971 (unpublished).
7.The numerical data were taken from W. S. Johnson and J. F. Gibbons, Projected Range Statistics in Semiconductors (Stanford U.P., Calif., 1969).
8.The agreement obtained should be considered qualitatively rather than quantitatively satisfactory for a variety of reasons. For instance, the ratio μH/μD was arbitrarily set equal to 0.85. Also, accurate data on bulk‐hole‐drift mobility are lacking. Lastly, recent results of T. E. Seidel [Ion Implantation Conference in Semiconductors, Germany, 1971 (unpublished)] showed that the Si stopping power for B ions, in the energy range of interest, is 20% higher than predicted by Johnson and Gibbons, and that significant channeling for light doses of B ions can take place in the 〈100〉 direction. Although channeling might be less probable for the heavier B doses used in this work, there is a distinct possibility that the interplay of these two factors could have produced the unexpected quantitative agreement observed.
9.B. L. Crowder, International Conference on Ion Implantation in Semiconductors, Germany, 1971 (unpublished).
10.In the event that significant channeling in the 〈100〉 direction does take place for doses of B ions, this effect could also be explained by the different profile of B implants due to reduced channeling in a somewhat more damaged crystal.
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