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Carrier Recombination and Trapping in Heteroepitaxial Si/Spinel
1.G. W. Cullen, J. Crystal. Growth 9, 107 (1971).
2.H. Schlötterer, Solid‐State Electron. 11, 947 (1968).
3.The Si/spinel was prepared by Union Carbide Corp., San Diego, Calif.
4.C. B. Norris and J. F. Gibbons, Electron and Ion Beam Science and Technology (Gordon and Breach, New York, 1969), Vol. 2, p. 933.
5.P. H. Hoff and T. E. Everhart, in 10th Symposium on Electron, and Laser Beam Technology, edited by L. Marton (San Francisco Press, San Francisco, 1969), p. 454.
6.G. W. Cullen, G. E. Gottlieb, C. C. Wang, and K. H. Zaininger, J. Electrochem. Soc. 116, 1444 (1969).
7.The decay does vary somewhat with ionization depth, suggesting some depth dependence in the defect characteristics.
8.G. W. Cullen and C. C. Wang, J. Electrochem. Soc. 118, 640 (1971),
8.see Ref. 20 therein.
9.S. T. Picraux, Appl. Phys. Letters (to be published).
10.The minority‐carrier diffusion length may be at least comparable to the film thickness if the measured lifetimes are surface or interface dominated.
11.B. L. Gregory, Appl. Phys. Letters 16, 67 (1970).
12.F. P. Heiman, Appl. Phys. Letters 11, 132 (1967).
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