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Electric‐field‐induced transient spin‐flip Raman laser pulses in InSb
1.For voltages below this level, hot‐electron effects result in a slight curvature of the I‐V characteristics. See, for example, E. H. Putley in Semiconductors and Semimetals, edited by R. K. Willardson and Albert C. Beer (Academic, New York, 1966), Vol. 1, p. 299.
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3.Although the spin‐flip Raman laser was operated continuously, the postdetection electronics responded only to ac signals.
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