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Phase‐matched submillimeter wave generation by difference‐frequency mixing in ZnGeP2
1.F. Zernike, Phys. Rev. Letters 22, 931 (1969).
2.N. VanTran, A. R. Strnad, A. M. Jean‐Louis, and G. Duraffourg in The Physics of Semimetals and Narrow Gap Semiconductors, edited by D. L. Carter and R. T. Bates (Pergamon, New York, 1971), p. 231.
3.N. VanTran and C. K. N. Patel, Phys. Rev. Letters 22, 463 (1969);
3.C. K. N. Patel and N. VanTran, Appl. Phys. Letters 15, 189 (1969).
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5.G. D. Boyd, E. Buehler, and F. G. Storz, Appl. Phys. Letters 18, 301 (1971).
6.G. D. Boyd, H. Kasper, and J. H. McFee, IEEE J. Quantum Electron. QE‐7, 563 (1971).
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9.M. Born and E. Wolf, Principles of Optics, 3rd ed. (Pergamon, New York, 1965), pp. 264, 283, 323.
10.D. A. Kleinman, A. Ashkin, and G. D. Boyd, Phys. Rev. 145, 338 (1966), Sec. 4.1.
11.G. D. Boyd and D. A. Kleinman, J. Appl. Phys. 39, 3597 (1968), Appendix 2. By permutation symmetry and assuming to be real, where is the clamped optical rectification mixing coefficient. The d form of the electro‐optic coefficient is related to the r form in mks units by Observe that in condensed notation.
11.Also see G. D. Boyd, T. J. Bridges, M. A. Pollack, and E. H. Turner, Phys. Rev. Letters 26, 387 (1971);
11.D. F. Nelson and M. Lax, Phys. Rev. B 3, 2795 (1971), Eq. (5.20).
12.G. D. Boyd and A. Ashkin, Phys. Rev. 146, 187 (1966).
13.Calibrated using a water‐vapor laser at 118.6 μ.
14.From Eq. (4), for and (see Ref. 15). Allowing correction factors of 0.28 for absorption, 0.75 for diffraction of (Ref. 16), and 0.38 for surface reflections gives
15.E. H. Turner (private communication) has determined in at that the clamped electro‐optic coefficient from which (see Ref. 11)
16.G. D. Boyd and D. A. Kleinman, J. Appl. Phys. 39, 3597 (1968). In our case at and, from Fig. 2,
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