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Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers
1.For example, R. Williams, J. Appl. Phys. 37, 3411 (1966).
2.R. R. Senechal and J. Basinski, J. Appl. Phys. 39, 3723 (1968).
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5.G. I. Roberts and C. R. Crowell, J. Appl. Phys. 41, 1769 (1970).
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8.The model treated theoretically by Roberts and Crowell (Ref. 5) has not, to our knowledge, been applied experimentally. Further, it rests on the assumption of thermal equilibrium under forward bias throughout the junction and, in particular, extremely close to the metal‐semiconductor interface. Schibli and Milnes (Ref. 4) give only cursory consideration to the real part of the admittance and present no data on losses. Thermally stimulated capacitance measurements (Ref. 6) depend on heating rates and assumptions on attempt‐to‐escape frequencies.
9.Briefly, current components are separated and measured using lock‐in techniques. The same apparatus serves as the current detector for the photoresponse measurements.
10.These crystals were p type, grown from Te solution and kindly supplied by Dr. Y. T. Tan of these laboratories. Prior to cleavage, pairs of Li‐diffused Ohmic contacts were applied according to the method suggested by Aven and Garwacki, J. Electrochem. Soc. 114, 1063 (1967).
11.W. G. Spitzer and C. A. Mead, J. Appl. Phys. 34, 3061 (1963).
12.W. Shockley and W. T. Read, Jr., Phys. Rev. 87, 835 (1952).
13.J. Maserjian, J. Vacuum Sci. Technol. 6, 843 (1969).
14.We have taken the degeneracy factors equal to 4 except for the shallowest level, which is believed to be due to a zinc vacancy, where is expected. See, for example, M. Aven and B. Segall, Phys. Rev. 130, 81 (1963).
15.R. P. Khosla and J. R. Fischer (private communication).
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