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Direct measurement of flat‐band voltage in MOS by infrared excitation
1.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 432.
2.R. Williams, Phys. Rev. 140, A569 (1965).
3.A. Many, Y. Goldstein, and N. Grover, Semiconductor Surfaces (Wiley, New York, 1965), p. 276.
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