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Photocapacitance studies of deep‐double‐electron‐trap oxygen in gallium phosphide
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10.The junction was grown in an open quartz system. The p side, near the junction, was grown at 1045 °C with 0.14% and 0.06% Zn added to the Ga. The n side was grown at 1010 °C with 0.004% Te added to the Ga. After growth, the sample was annealed at 600 °C for 5 h and at 500 °C for 9 h.
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12.In this analysis, we assume that the light is unable to alter the degree of ionization of the O donor until the free‐carrier concentration decreases to about the value in n‐ or p‐type material. We calculate that this decrease in carrier concentration takes place at about 5 Debye lengths from the edges of the depletion layer where the first data points are plot ted in Fig. 2.
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