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Auger spectroscopic observation of Si–Au mixed‐phase formation at low temperatures
1.A. Hiraki, M‐A. Nicolet, and J. W. Mayer, Appl. Phys. Letters 18, 178 (1971).
2.A. Hiraki, E. Lugujjo, M‐A. Nicolet, and J. W. Mayer, Phys. Status Solidi (a) 7, 401 (1971).
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5.See, for example, J. W. Mayer, L. Eriksson, and J. A. Darres, Ion Implantation in Semiconductors (Academic, New York, 1970), p. 144.
6.P. W. Palmberg and T. N. Rhodin, J. Appl. Phys. 9, 2425 (1968).
7.C. C. Chang, Surface Sci. 25, 53 (1971).
8.In the backscattering measurements, because of its depth resolution (Ref. 5) in the previous work, the data points represent the average information of the layers of 100–300 Å. However, in the Auger spectra the data points are the average of a few monolayers (). Therefore, in this sense Auger spectroscopy gives more detailed and localized knowledge than does the backscattering technique.
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