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Background energy level spectroscopy in GaP using thermal release of trapped space charge in Schottky barriers
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7.The concept of a flat electron Fermi level in the barrier region as shown in Fig. 1 is strictly correct only for zero‐bias conditions in the barrier. Normally, under reverse bias the electron Fermi level experiences some curvature in the barrier region [E. H. Rhoderick (unpublished)], and this imposes the possibility of an error in our postulated value of under reverse bias. Although no detailed calculations have yet been made to determine the extent of this curvature in GaP Schottky barriers, the reasonably close agreement we obtain between values of determined by the total charge and heating rate methods shows that we are justified in ignoring this error as being small in GaP Schottky barriers.
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