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Photosensitive field emission from silicon point arrays
1.J. Arthur, J. Appl. Phys. 36, 3221 (1965).
2.P. G. Borzyak, A. F. Yatsenko, and L. S. Miroshnichenko, Phys. Status Solidi 14, 403 (1966).
3.G. Busch and T. Fischer, Helv. Phys. Acta 35, 494 (1962).
4.L. M. Baskin, O. L. Lvov, and G. N. Fursey, Phys. Status Solidi (b) 47, 49 (1971).
5.R. Stratton, Phys. Rev. 125, 67 (1962).
6.L. Apker and E. A. Taft, Phys. Rev. 88, 1037 (1952).
7.M. I. Elinson, A. G. Zdan, V. F. Krapivin, Zh. B. Lipkovskii, V. N. Lutskii, and V. B. Sandomirskii, Radiotekhn. i Elektron. 10, 1288 (1965).
8.J. R. Arthur and R. S. Wagner, 28th Physical Electronics Conference, Minneapolis, Minn., 1968 (unpublished).
9.R. L. Bell and W. E. Spicer, Proc. IEEE 12, 1788 (1970).
10.From Gauss’s law, can be expressed as where is the permittivity of free space, is the acceptor concentration, and d is the anode‐cathode spacing. F is a field intensification factor estimated from two‐dimensional field plotting to be about 20.
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