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n‐p junction ir detectors made by proton bombardment of epitaxial PbTe
1.E. M. Logothetis, H. Holloway, J. A. Varga, and E. Wilkes, Appl. Phys. Letters 19, 318 (1971).
2.These detectors cooled to 77 °K, were 295 °K background limited at large fields of view, and had a Johnson‐noise‐limited detectivity of up to at The quantum efficiencies were in the range 0.5–0.6.
3.K. W. Nill, A. R. Calawa, T. C. Harman, and J. N. Walpole, Appl. Phys. Letters 16, 375 (1970).
4.A. G. Foyt, W. T. Lindly, and J. P. Donnelly, Appl. Phys. Letters 16, 335 (1970);
4.J. P. Donnelly, T. C. Harman, and A. G. Foyt, Appl. Phys. Letters 18, 259 (1971).
5.H. Holloway, E. M. Logothetis, and E. Wilkes, J. Appl. Phys. 41, 3543 (1970);
5.H. Holloway and E. M. Logothetis, J. Appl. Phys. 42, 4522 (1971).
6.T. F. Tao, C. C. Wang, and J. W. Sunier, Appl. Phys. Letters 20, 235 (1972).
7.Au‐PbTe Schottky barriers made in our laboratory using PbTe films on have shown zero‐bias resistances considerably smaller than those of Pb‐PbTe barriers. The highest RA product observed with n‐type films was about
8.The zero‐bias condition was maintained with an external current source which compensated for the forward bias induced by the 295°K background.
9.The RC product is not independent of the area (A) of these devices; although C/A is approximately constant for all diodes (with the same carrier concentration), the RA product of the larger devices is smaller than that of the smaller diodes.
10.Results that are similar to those reported here have recently been obtained by R. B. Schoolar (private communication) of the Naval Ordance Laboratory who also proton bombarded PbTe grown on substrates.
11.We have not yet studied the effect of annealing (Ref. 4) on the properties of the proton‐made n‐p junction diodes. However, exposure to the atmosphere at room temperature for several weeks does not seem to affect the characteristics of these devices.
12.H. Holloway, W. H. Weber, E. M. Logothetis, A. J. Varga, and K. F. Yeung, Appl. Phys. Letters 21, 5 (1972).
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