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Reduction of threshold current density in GaAs–Al x Ga1−x As heterostructure lasers by separate optical and carrier confinement
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10.1063/1.1654518
/content/aip/journal/apl/22/11/10.1063/1.1654518
http://aip.metastore.ingenta.com/content/aip/journal/apl/22/11/10.1063/1.1654518
/content/aip/journal/apl/22/11/10.1063/1.1654518
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/content/aip/journal/apl/22/11/10.1063/1.1654518
2003-10-16
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement
http://aip.metastore.ingenta.com/content/aip/journal/apl/22/11/10.1063/1.1654518
10.1063/1.1654518
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