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Solid‐phase epitaxial growth of Si mesas from al metallization
1.See, for example, J. O. McCaldin, Bull. Am. Phys. Soc. 17, 683 (1972), or Ref. 5.
2.The present specimens differ significantly from customary integrated‐circuit practice in that (a) much thicker metallization is used to produce growths high enough to be readily seen in the SEM and (b) coevaporation of Si is used to suppress substrate dissolution, so that growth structures will stand out on an otherwise flat surface.
3.J. O. McCaldin and H. Sankur, Appl. Phys. Letters 19, 524 (1971).
4.All SEM observations were made without the application of conductive overcoatings.
5.V. Marrello, J. M. Caywood, J. W. Mayer, and M.‐A. Nicolet, Phys. Status Solidi (to be published).
6.See, for example, A. Y. C. Yu and C. A. Mead, Solid‐State Electron. 13, 97 (1970).
7.In other specimens the regions between squares would brighten only over a limited but sharply defined portion of the mesa, which would indicate a discontinuity in the interconnection.
8.H. J. Axon and W. Hume‐Rothery, Proc. Roy. Soc. (London) A 193, 1 (1948).
9.J. O. McCaldin and H. Sankur, Appl. Phys. Letters 20, 171 (1972).
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