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Metal oxide varistor‐A multijunction thin‐film device
1.The measurements reported in this letter were made upon GE‐MOV™ varistors produced by the General Electric Company.
2.J. D. Harnden, F. D. Martzloff, W. G. Morris, and F. G. Golden, Electronics 45, (No. 21), 91 (1972).
3.M. Matsuoka, Jap. J. Appl. Phys. 10, 736 (1971).
4.M. Matsuoka, T. Masuyama, and Y. Iida, J. Jap. Soc. Appl. Phys. Suppl. 39, 94 (1970).
5.W. G. Morris, J. Am. Ceram. Soc. 56, 360 (1973).
6.Matsuoka [Jap. J. Appl. Phys. 10, 736 (1971)] has tentatively ascribed the varistor action to a mechanism based on space‐charge‐limited currents. This theory requires that the breakdown voltage per intergranular layer where is a trap density in the intergranular layer of value Experimentally varies by less than a factor of 2 for a wide variety of intergranular layer compositions and processing schedules which is rather improbable if, in fact, In addition this theory would appear to imply a dependence of on temperature which is greater than that observed. See, for example M. A. Lampert and P. Mark, Current‐Injection in Solids (Academic, New York, 1970).
7.J. G. Simmons, J. Phys. D 4, 613 (1971).
8.R. M. Hill, Philos. Mag. 23, 59 (1971).
9.There is some controversy over the numerical value of β and the exact form of . Discussions are presented by Simmons [J. Phys. D 4, 613 (1971)] and by Jonscher [Thin Solid Films 1, 213 (1967)]. Since we have no exact value for t, and therefore for F, we have somewhat arbitrarily chosen the relation given in Eq. (2).
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