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Room‐temperature laser operation of In x Ga1−x As p‐n junctions
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10.1063/1.1655104
/content/aip/journal/apl/24/2/10.1063/1.1655104
http://aip.metastore.ingenta.com/content/aip/journal/apl/24/2/10.1063/1.1655104
/content/aip/journal/apl/24/2/10.1063/1.1655104
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/content/aip/journal/apl/24/2/10.1063/1.1655104
2003-10-09
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature laser operation of InxGa1−xAs p‐n junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/24/2/10.1063/1.1655104
10.1063/1.1655104
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