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Threshold reduction in Pb1−x Sn x Te laser diodes through the use of double heterojunction geometries
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10.1063/1.1655540
/content/aip/journal/apl/25/8/10.1063/1.1655540
http://aip.metastore.ingenta.com/content/aip/journal/apl/25/8/10.1063/1.1655540
/content/aip/journal/apl/25/8/10.1063/1.1655540
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/content/aip/journal/apl/25/8/10.1063/1.1655540
2003-10-09
2014-09-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold reduction in Pb1−xSnx Te laser diodes through the use of double heterojunction geometries
http://aip.metastore.ingenta.com/content/aip/journal/apl/25/8/10.1063/1.1655540
10.1063/1.1655540
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