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Enhanced optical frequency detection with negative differential resistance in metal‐barrier‐metal point‐contact diodes
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4.Higher‐resistance diodes are obtainable, but the current source in our biasing scheme sets an upper limit to the resistance of the diodes which can be utilized.
5. has previously been observed to exhibit instabilities for certain voltage biases. These instabilities indirectly suggested the presence of negative differential resistance as reported by S. M. Faris [Master’s report (University of California, 1971) (unpublished)].
6.For the numerical calculations of including current saturation we used where β is the circuit loss, α is the saturating parameter, and is the optical voltage across the diode. the saturated current is equal to A power density of and an effective coupling length of the whisker of 1 μ gives the value of used in the calculation, α was chosen as ∼100 Ω and β∼100 Ω to best fit the experimental curve. This gives
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12.R. V. Schmidt (private communication).
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