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Junction edge region thermally stimulated capacitance (TSCAP) of n ‐Si doped with phosphorus and bismuth
1.C. T. Sah and J. W. Walker, Appl. Phys. Lett. 22, 384 (1973).
2.A. Onton, Ph.D. thesis (Purdue University, 1967) (unpublished);
2.quoted in T. H. Ning and C. T. Sah, Phys. Rev. B 4, 3468 (1971).
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