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A new model for the negative voltage instability in MOS devices
1.B. E. Deal, M. Sklar, A. S. Grove, and E. H. Snow, J. Electrochem. Soc. 114, 266 (1967).
2.A. Goetzberger, A. D. Lopez, and R. J. Strain, J. Electrochem. Soc. 120, 90 (1973).
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7.In Ref. 6 it was shown that the number of ground states raised above the Fermi level is proportional to the negative voltage bias. In this model this can only be true if, under flatband condition, there are no ground states in the region of the band gap of the silicon.
8.P. Rossel, H. Martinot, and D. Esteve, Solid‐State Electron. 13, 425 (1970).
9.In this reference it is shown that there are also centers with an activation energy of 0.6 eV. These centers are not of importance in this experiment since they discharge at 77 K as soon as the bias is removed from the sample.
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