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Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
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10.1063/1.88093
/content/aip/journal/apl/26/3/10.1063/1.88093
http://aip.metastore.ingenta.com/content/aip/journal/apl/26/3/10.1063/1.88093
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/content/aip/journal/apl/26/3/10.1063/1.88093
2008-09-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/26/3/10.1063/1.88093
10.1063/1.88093
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