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Silicon nitride trap properties as revealed by charge−centroid measurements on MNOS devices
1.B. H. Yun and P. C. Arnett, International Electron Devices Meeting, Washington, D.C., 1972 (IEEE, New York, 1972).
2.B. H. Yun, Appl. Phys. Lett. 23, 152 (1973).
3.B. H. Yun, Appl. Phys. Lett. 25, 340 (1974).
4.R. W. Keyes, IBM J. Res. Develop. 7, 334 (1963).
5.O. Madelung, Handbuch der Physik, edited by S. Flugge (Springer, Berlin, 1957), Vol. 20, p. 58.
6.J. G. Simmons, Phys. Rev. 155, 657 (1967).
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