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Electron−hole pair creation energy in SiO2
1.O. L. Curtis, Jr., J. R. Srour, and K. Y. Chiu, J. Appl. Phys. 45, 4506 (1974).
2.L. Onsager, Phys. Rev. 54, 554 (1938).
3.G. Jaffe, Ann. Phys. (Leipz.) 42, 303 (1913).
4.D. Pines, Rev. Mod. Phys. 28, 184 (1956).
5.A. Rothwarf, J. Appl. Phys. 44, 752 (1973).
6.T. H. DiStephano and D. E. Eastman, Phys. Rev. Lett. 27, 1560 (1971).
7.D. Pines, Phys. Rev. 92, 626 (1953).
8.A. Rose, RCA Rev. 27, 600 (1966).
9.T. E. Everhart and P. H. Hoff, J. Appl. Phys. 42, 5837 (1971).
10.P. Langevin, Ann. Chim. Phys. 28, 289 (1903);
10.P. Langevin, 28, 433 (1903)., Ann. Chim. Phys.
11.Since the analysis described in this letter was carried out, J. R. Srour, O. L. Curtis, Jr., and K. Y. Chiu [IEEE Trans. Nucl. Sci. (to be published)] have reported additional experiments on films for which a different processing technique was employed. A greater percentage of carrier collection at high electric fields was achieved. Presumably, this increased carrier collection is due to a reduced concentration of recombination centers in these oxides grown by the different processing technique. These authors conclude that the carrier collection at the higher fields establishes an upper limit of for the electron‐hole pair creation energy.
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