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Evidence for electronic stopping in ion implantation: Shallower profile of lighter isotope 10B in Si
1.For example, T. E. Seidel, Proceedings Conference on Ion Implantation in Semiconductors, edited by I. Ruge and J. Graul (Springer, New York, 1971), p. 47;
1.J. F. Zlegler, B. L. Crowder, G. W. Cole, J. E. E. Baglin, and B. J. Masters, Appl. Phys. Lett. 21, 16 (1972).
2.For example, W. S. Johnson and J. F. Gibbons, Projected Range Statistics in Semiconductors (Stanford University Bookstore, Stanford, Calif., 1970).
3.J. Lindhard, M. Scharff, and H. E. Schiott, Mat. Fys. Medd. Dan. Vid. Selsk. 33, No. 14 (1963).
4.J. A. Copeland, IEEE Trans. Electron. Devices ED‐16, 445 (1969).
5.F. H. Eisen, B. Welch, J. E. Westmoreland, and J. W. Mayer, Proceedings of the International Conference on Atomic Collision Phenomena in Solids, University of Sussex, 1969, edited by D. W. Palmer, M. W. Thompson, and P. D. Townsend (North‐Holland, Amsterdam and London, 1970), p. 111.
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