Effect of electron‐electron and impurity scattering on hot electron repopulation in n‐Si at 77 K
1.H. D. Rees, J. Phys. Chem. Solids 30, 643 (1969).
2.The field anisotropy in conductivity exhibited by is primarily due to repopulation. Since there is no repopulation for a <111> field, the conductivity ratio directly reflects repopulation for a <100> field. See James W. Holm‐Kennedy and K. S. Champlin, J. Appl. Phys. 43, 1878 (1972), for a description of repopulation effects in n‐silicon.
3.M. Ashe, B. L. Boichenko, V. M. Bondar, and O. G. Sarbei, Phys. Status Solidi B 44, 173 (1971).
4.James G. Nash and James W. Holm‐Kennedy, Appl. Phys. Lett. 24, 139 (1974).
5.W. Fawcett, Proceedings of the 10th International Conference on the Physics of Semiconductors (U.S. AEC, Cambridge, 1970), p. 51.
6.Esther M. Conwell, High Field Transport in Semiconductors (Academic, New York, 1967). The expression for intervalley scattering is given on p. 223 and that for acoustic scattering on p. 225.
7.James G. Nash and James W. Holm‐Kennedy, Appl. Phys. Lett. 25, 507 (1974).
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9.Harvey Brooks, in Advances in Electronics and Electron Physics, edited by L. Marton (Academic, New York, 1955), p. 161.
10.In Ref. 9, p. 156.
11.T. J. M. Boyd and J. J. Sanderson, Plasma Dynamics (Barnes and Noble, New York, 1969), p. 288.
12.The experimental results were taken from Ref. 4.
13.Intervalley phonon activation energies (conventionally given in °K) have been determined by J. C. Portal, L. Eaves, S. Askenazy, and R. A. Stradling, Solid State Commun. 24, 103 (1974).
14.Streaming occurs when scattering by spontaneous emission of large‐energy phonons predominates. After such a scatter, an electron is accelerated in the direction of the field until it gains enough energy to again emit a phonon, whereupon the process repeats itself. Since the electron spends most of its time moving in the direction of the field, this behavior is reflected in a distribution function which becomes largest, or “streamed” along the field direction.
15.James G. Nash, Ph.D. thesis (UCLA, 1974) (unpublished).
16.Ionized impurity scattering was found to have little effect on repopulation for 1. 87‐Ω m material at 600 V/cm.
17.There would be little direct effect on the conductivity ratio because and increase by approximately the same amount when FDE occurs.
18.W. Kaiser and G. H. Wheatley, Phys. Rev. Lett. 3, 334 (1959).
19.Our experiment showed no evidence of high‐field carrier injection, which could also increase current density. Also, our experimental and theoretical Ohmic resistivity vs doping concentration at 77 K was in accord, indicating that the interpretation of experimental results was not affected by an incorrect value for used to determine were theoretically calculated.
20.The error in the e‐e collision term using the Fokker‐Planck approximation from relations derived in Ref. 11 to be about 10%. Analysis of the effect of ionized impurity scattering on the tail of f showed that neglect of anisotropy was not likely to cause errors large enough to explain the discrepancies in Fig. 1.
21.P. J. Price and R. L. Hartman, J. Phys. Chem. Solids 25, 567 (1964).
22.G. Weinreich, T. M. Sanders, and H. G. White, Phys. Rev. 114, 33 (1959).
23.G. Ascarelli and S. Rodriguez, Phys. Rev. 124, 1321 (1961).
24.P. Norton, T. Braggins, and H. Levinstein, Phys. Rev. Lett. 30, 488 (1973).
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