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Anomalous temperature effect of oxidation stacking faults in silicon
1.S. M. Hu, J. Appl. Phys. 45, 1567 (1974).
2.For a list of relevant works on the subject of oxidation stacking faults, see Ref. 1.
3.Y. Sugita and T. Kato, J. Appl. Phys. 42, 5847 (1971).
4.W. A. Fisher and J. A. Amick, J. Electrochem. Soc. 113, 1054 (1966).
5.A. Mayer, RCA Rev. 31, 414 (1970).
6.For example, see J. V. Florio and W. D. Robinson, Surf. Sci. 22, 459 (1970). These authors observed an order‐disorder transition in a free structure at ̃900°C. Under an surface film, the transition temperature, if it exists, might be expected to be higher.
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