No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Anomalous temperature effect of oxidation stacking faults in silicon
1.S. M. Hu, J. Appl. Phys. 45, 1567 (1974).
2.For a list of relevant works on the subject of oxidation stacking faults, see Ref. 1.
3.Y. Sugita and T. Kato, J. Appl. Phys. 42, 5847 (1971).
4.W. A. Fisher and J. A. Amick, J. Electrochem. Soc. 113, 1054 (1966).
5.A. Mayer, RCA Rev. 31, 414 (1970).
6.For example, see J. V. Florio and W. D. Robinson, Surf. Sci. 22, 459 (1970). These authors observed an order‐disorder transition in a free structure at ̃900°C. Under an surface film, the transition temperature, if it exists, might be expected to be higher.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month