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Saturation of impurity photoconductivity in n‐GaAs with intense YAG laser light
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6.It is interesting to note that an analogous saturation in optical absorption has been seen by A. E. Michel and M. I. Nathan, Appl. Phys. Lett. 6, 101 (1965), under different circumstances. Their observations were made with GaAs injection laser radiation on compensated p‐GaAs with of manganese as the absorbing impurity and an absorption coefficient of about at low light intensities.
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12.By contrast, excitation in the visible (5145 Å), even at rather low intensities, produces very hot carrier distributions in GaAs as observed by J. Shah and R. C. C. Leite, Phys. Rev. Lett. 22, 1304 (1969).
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