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Growth characteristics of GaAs‐Ga1−x Al x As structures fabricated by liquid‐phase epitaxy over preferentially etched channels
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10.1063/1.88710
/content/aip/journal/apl/28/4/10.1063/1.88710
http://aip.metastore.ingenta.com/content/aip/journal/apl/28/4/10.1063/1.88710
/content/aip/journal/apl/28/4/10.1063/1.88710
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/content/aip/journal/apl/28/4/10.1063/1.88710
2008-08-28
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/28/4/10.1063/1.88710
10.1063/1.88710
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