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Single heterostructure Al x Ga1−x As phase modulator with SnO2‐doped In2O3 cladding layer
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10.1063/1.88880
/content/aip/journal/apl/29/1/10.1063/1.88880
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/1/10.1063/1.88880
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/content/aip/journal/apl/29/1/10.1063/1.88880
2008-08-28
2014-09-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single heterostructure AlxGa1−xAs phase modulator with SnO2‐doped In2O3 cladding layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/1/10.1063/1.88880
10.1063/1.88880
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