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Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage
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10.1063/1.88930
/content/aip/journal/apl/29/11/10.1063/1.88930
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/11/10.1063/1.88930
/content/aip/journal/apl/29/11/10.1063/1.88930
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/content/aip/journal/apl/29/11/10.1063/1.88930
2008-08-28
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impurity gettering in semi‐insulating gallium arsenide using ion‐implantation damage
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/11/10.1063/1.88930
10.1063/1.88930
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