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Laser oscillation involving nitrogen isoelectronic impurities in indirect‐gap Al x Ga1−x As (x=0.46, 2 °K)
1.P. J. Dean, J. Lumin. 7, 51 (1973).
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11.In this case, the composition ratio x was determined from the data of A. Onton, M. R. Lorenz, and J. M. Woodall [Bull. Am. Phys. Soc. 16, 371 (1971)].
11.According to recent data [B. Monemar, K. K. Shih, and G. D. Pettit, J. Appl. Phys. 47, 2604 (1976)], the composition ratio x of the active layer of the sample used in this experiment corresponds to 0. 34.
12.According to photoluminescence excitation spectroscopy at 2 °K, efficient band‐to‐band direct transition () occurs at 2.12 eV (5850 Å). At excitation energy over 3.0 eV, emission efficiency seriously decreases due to the strong surface‐recombination presumably caused by implantation damages. The excitation light of 480.0 nm (2.58 eV) is, therefore, warrantable to generate carriers efficiently in the crystal.
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