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Laser oscillation involving nitrogen isoelectronic impurities in indirect‐gap Al x Ga1−x As (x=0.46, 2 °K)
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10.1063/1.88932
/content/aip/journal/apl/29/11/10.1063/1.88932
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/11/10.1063/1.88932
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/content/aip/journal/apl/29/11/10.1063/1.88932
2008-08-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Laser oscillation involving nitrogen isoelectronic impurities in indirect‐gap AlxGa1−xAs (x=0.46, 2 °K)
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/11/10.1063/1.88932
10.1063/1.88932
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