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MOS measurement of oxygen recoils from As implantation into silicon dioxide
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10.1063/1.89037
/content/aip/journal/apl/29/4/10.1063/1.89037
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/4/10.1063/1.89037
/content/aip/journal/apl/29/4/10.1063/1.89037
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/content/aip/journal/apl/29/4/10.1063/1.89037
2008-08-28
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: MOS measurement of oxygen recoils from As implantation into silicon dioxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/4/10.1063/1.89037
10.1063/1.89037
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