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Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors
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10.1063/1.89093
/content/aip/journal/apl/29/6/10.1063/1.89093
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/6/10.1063/1.89093
/content/aip/journal/apl/29/6/10.1063/1.89093
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/content/aip/journal/apl/29/6/10.1063/1.89093
2008-08-28
2014-10-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Oxide thickness dependence of high‐energy‐electron‐, VUV‐, and corona‐induced charge in MOS capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/29/6/10.1063/1.89093
10.1063/1.89093
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