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Energy dependence of amorphizing implant dose in silicon
1.J. F. Gibbons, Proc. IEEE 60, 1062 (1972) and references therein.
2.F. L. Vook, Radiation Damage and Defects in Semiconductors, edited by J. E. Whitehouse (Inst. of Phys., London, 1972), p. 60 and references therein.
3.B. L. Crowder, R. S. Title, M. H. Brodsky, and G. D. Pettit, Appl. Phys. Lett. 16, 205 (1970).
4.These values are the typical dose rates used. Reference 5 shows that there is only a very small, if any, dose‐rate dependence in the type of data presented here.
5.J. R. Dennis and E. B. Hale, Radiat. Eff. (to be published).
6.K. B. Winterbon, Ion Implantation Range and Energy Deposition Distributions (Plenum, New York, 1975), Vol. 2.
7.D. K. Brice, Ion Implantation Range and Energy Deposition Distributions (Plenum, New York, 1975), Vol. 1.
8.F. F. Morehead and B. L. Crowder, Radiat. Eff. 6, 27 (1970).
9.F. F. Morehead, B. L. Crowder, and R. S. Title, J. Appl. Phys. 43, 1112 (1972).
10.J. R. Dennis, G. K. Woodward, and E. B. Hale, International Conference on Lattice Defects in Semiconductors (Inst. of Phys., London, 1974), p. 467.
11.J. R. Dennis, Ph.D. thesis (University of Missouri‐Rolla, 1976) (unpublished).
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