No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Dislocation pinning effect of oxygen atoms in silicon
1.S. M. Hu and W. J. Patrick, J. Appl. Phys. 46, 1869 (1975).
2.S. M. Hu, J. Appl. Phys. 46, 1470 (1975).
3.S. M. Hu, J. Appl. Phys. 46, 1465 (1975).
4.C. S. Fuller and R. A. Logan, J. Appl. Phys. 28, 1427 (1957).
5.W. Kaiser, H. L. Frisch, and H. Reiss, Phys. Rev. 112, 1546 (1958).
6.R. A. Logan and A. J. Peters, J. Appl. Phys. 30, 1627 (1959).
7.K. Graff, E. Grallath, S. Ades, G. Goldbach, and G. Tölg, Solid‐State Electron. 16, 887 (1973).
8.W. R. Thurber, Determination of Oxygen Concentration in Silicon and Germanium by Infrared Absorption, Natl. Bur. Stand. Technical Note No. 529 (U.S. GPO, Washington, D.C., 1970).
9.H. Hrostowski and R. H. Kaiser, J. Phys. Chem. Solids 9, 214 (1959).
10.S. M. Hu (unpublished).
11.R. Bullough and R. C. Newman, Progress in Semiconductors, edited by A. F. Gibson and R. E. Burgess (Wiley, New York, 1963), Vol. 7, pp. 99ff.
12.R. Labusch, Acta Metall. 20, 917 (1972).
13.S. M. Hu, in Atomic Diffusion in Silicon, edited by D. Shaw (Plenum, New York, 1973), pp. 306ff.
14.A case loosely analogous to cluster hardening exists at very high solute concentration and when the dislocation line tension is much greater than the pinning force. For such a case, Mott and Nabarro showed (see discussion by Labusch, Ref. 12) that logC. Although this could also explain the present experimental observation, it is deemed inappropriate to the present case because of the condition of low oxygen concentration.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month