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Selective area growth of GaAs/Al x Ga1−x As multilayer structures with molecular beam epitaxy using Si shadow masks
1.See, for example, A. Y. Cho and J. R. Arthur in Progress in Solid State Chemistry, edited by G. A. Somorjai and J. O. McCaldin (Pergamon, Oxford, 1975), Vol. 10, p. 157.
2.J. L. Merz, R. A. Logan, W. Wiegmann, and A. C. Gossard, Appl. Phys. Lett. 28, 337 (1975).
3.Y. Tami, Y. Komiya, and Y. Harada, J. Electrochem. Soc. 118, 118 (1971).
4.M. Ilegems, J. Appl. Phys. 48, 1278 (1977).
5.W. T. Tsang and A. Y. Cho, Appl. Phys. Lett. 30, 293 (1977).
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