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A critical temperature for the growth of SiC on Si and its effect on stacking‐fault nucleation in Si homoepitaxy in high vacuum
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10.1063/1.89808
/content/aip/journal/apl/31/9/10.1063/1.89808
http://aip.metastore.ingenta.com/content/aip/journal/apl/31/9/10.1063/1.89808
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/content/aip/journal/apl/31/9/10.1063/1.89808
2008-08-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A critical temperature for the growth of SiC on Si and its effect on stacking‐fault nucleation in Si homoepitaxy in high vacuum
http://aip.metastore.ingenta.com/content/aip/journal/apl/31/9/10.1063/1.89808
10.1063/1.89808
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