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Continuous room‐temperature operation of Ga(1−x)Al x As‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition
1.Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, Fiz. Tekh. Poluprovodn. 4, 1826 (1970)
1.[Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, Sov. Phys.‐Semicond. 4, 1573 (1971)].
2.I. Hayashi, M. B. Panlsh, P. W. Foy, and S. Sumski, Appl. Phys. Lett. 17, 109 (1970).
3.A. Y. Cho, R. W. Dixon, H. C. Casey, and R. L. Hartman, Appl. Phys. Lett. 28, 501 (1976).
4.R. D. Dupuis, P. D. Dapkus, R. D. Yingling, and L. A. Moudy, Appl. Phys. Lett. 31, 201 (1977).
5.R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 31, 468 (1977).
6.R. D. Dupuis and P. D. Dapkus, Appl. Phys. Lett. 31, 839 (1977).
7.R. D. Dupuis, P. D. Dapkus, and L. A. Moudy, Technical Digest of the 1977 IEEE International Electron Devices Meeting, Washington, D.C., 1977 (IEEE, New York, 1977), p. 575;
7.Appl. Phys. Lett. 32 (to be published).
8.The doping levels are assumed from values measured by the van der Pauw technique at room temperature on thicker (8–10 μm) films grown under the same conditions on (100) GaAs:Cr substrates. Layer thicknesses are measured by SEM examination of cleaved cross sections that have been etched with (30%) adjusted to pH 7.05 with or etched with NaOCl.
9.The mole fraction of Al, x, in the confinement layers is determined by double‐crystal x‐ray lattice parameter measurements on 2–10‐μm‐thick single‐layer films grown on GaAs:Si substrates employing the same conditions as was utilized for the growth of each DH laser wafer.
10.T. Tsukada, R. Ito, H. Nakashima, and O. Nakada, IEEE J. Quantum Electron. QE‐9, 356 (1973).
11.R. L. Hartman, N. E. Shumaker, and R. W. Dixon, Appl. Phys. Lett. 31, 756 (1977).
12.Drive currents for testing have in no case exceeded 1. 5 times the threshold current.
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