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Spatially controlled crystal regrowth of ion‐implanted silicon by laser irradiation
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10.This lens has been designed and fabricated at Western Electric ERC in Princeton.
11.We present all the data as a function of the incident peak power density. For the fixed pulse length of 110 nsec this can be simply translated into the incident energy density. We do not attempt at the present time to provide values of power and/or energy density which was actually absorbed in the layer being recrystallized.
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17.These preliminary measurements were performed with a Q‐switched laser: spot size repetition rate 800 Hz; pulse length 300 nsec and average incident pulse power of The beam was focused with a Ge lens with a 1‐in. focal length.
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