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Light‐sensitive electron‐loss measurements on clean and oxygen‐adsorbed amorphous silicon
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4.We are indebted to D. Carlson of the RCA Laboratories, Princeton, N.J., for supplying all the material used in this work.
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7.For quantitative estimates of adsorbed oxygen, we used as a calibration the oxygen Auger signal from a single‐crystal (100) Si surface which had been activated to a state of negative electron affinity, in which state the oxygen adsorption is accurately known. See B. Goldstein, Surf. Sci. 35, 227 (1973).
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15.The light sensitivity of our loss peaks was not large enough to permit optical spectroscopy at less than band‐gap energies, although light effects were seen at photon energies as low as 1.6 eV.
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