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Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures
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10.1063/1.90205
/content/aip/journal/apl/33/10/10.1063/1.90205
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/10/10.1063/1.90205
/content/aip/journal/apl/33/10/10.1063/1.90205
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/content/aip/journal/apl/33/10/10.1063/1.90205
2008-08-08
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of surface‐ and bulk‐generation currents in low‐leakage silicon MOS structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/33/10/10.1063/1.90205
10.1063/1.90205
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